Spin injection and electric field effect in degenerate semiconductors

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped semiconductor structures used in most experiments; we demonstrate that, at the same time, it corresponds to the regime in which carrier-carrier interactions assume a relevant role. Starting from a general formulation of the drift-diffusion equations, which includes many-body correlation effects, we perform detailed calculations of the spin injection characteristics of various heterostructures, and analyze the combined effects of carrier density variation, applied electric field and Coulomb interaction. We show the existence of a degenerate regime, peculiar to semiconductors, which strongly differs, as spin-transport is concerned, from the degenerate regime of metals.Comment: Version accepted for publication in Phys. Rev.

Shot noise in a diffusive F-N-F spin valve

Fluctuations of electric current in a spin valve consisting of a diffusive conductor connected to ferromagnetic leads and operated in the giant magnetoresistance regime are studied. It is shown that a new source of fluctuations due to spin-flip scattering enhances strongly shot noise up to a point where the Fano factor approaches the full Poissonian value.Comment: 5 pages, 3 figure

Mesoscopic transport beyond linear response

We present an approach to steady-state mesoscopic transport based on the maximum entropy principle formulation of nonequilibrium statistical mechanics. Our approach is not limited to the linear response regime. We show that this approach yields the quantization observed in the integer quantum Hall effect at large currents, which until now has been unexplained. We also predict new behaviors of non-local resistances at large currents in the presence of dirty contacts.Comment: 14 pages plus one figure (with an insert) (post-script codes appended), RevTeX 3.0, UCF-CM-93-004 (Revised

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four scenarios corresponding to the injection or the collection of spin polarized electrons at Schottky contacts to n-type or p-type semiconductors. The transport properties of the interface are described by a spin-dependent interface resistance, resulting from an interfacial tunneling region. The spin-dependent interface resistance is crucial for achieving spin injection or spin polarization sensitivity in these configurations. We find that the depletion region resulting from Schottky barrier formation at a metal/semiconductor interface is detrimental to both spin injection and spin detection. However, the depletion region can be tailored using a doping density profile to minimize these deleterious effects. For example, a heavily doped region near the interface, such as a delta-doped layer, can be used to form a sharp potential profile through which electrons tunnel to reduce the effective Schottky energy barrier that determines the magnitude of the depletion region. The model results indicate that efficient spin-injection and spin-polarization detection can be achieved in properly designed structures and can serve as a guide for the structure design.Comment: RevTex

Electric-field dependent spin diffusion and spin injection into semiconductors

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.Comment: 5 pages, 3 eps figure

Current driven switching of magnetic layers

The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium exchange interaction between the ferromagnetic layers. This interaction defines the magnetic configuration of the layers with minimum energy and establishes the threshold for a critical switching current. Depending on the direction of the critical current, the interaction changes sign and a given magnetic configuration becomes unstable. To model the time dependence of the switching process, we derive a set of coupled Landau-Lifshitz equations for the ferromagnetic layers. Higher order terms in the non-equilibrium exchange coupling allow the system to evolve to its steady-state configuration.Comment: 8 pages, 2 figure. Submitted to Phys. Rev.

Spin Accumulation in Quantum Wires with Strong Rashba Spin-Orbit Coupling

We present analytical and numerical results for the effect of Rashba spin-orbit coupling on band structure, transport, and interaction effects in quantum wires when the spin precession length is comparable to the wire width. In contrast to the weak-coupling case, no common spin-quantization axis can be defined for eigenstates within a single-electron band. The situation with only the lowest spin-split subbands occupied is particularly interesting because electrons close to Fermi points of the same chirality can have approximately parallel spins. We discuss consequences for spin-dependent transport and effective Tomonaga-Luttinger descriptions of interactions in the quantum wire.Comment: 4 pages, 4 figures, expanded discussion of spin accumulatio

Ground state properties of ferromagnetic metal/conjugated polymer interfaces

We theoretically investigate the ground state properties of ferromagnetic metal/conjugated polymer interfaces. The work is partially motivated by recent experiments in which injection of spin polarized electrons from ferromagnetic contacts into thin films of conjugated polymers was reported. We use a one-dimensional nondegenerate Su-Schrieffer-Heeger (SSH) Hamiltonian to describe the conjugated polymer and one-dimensional tight-binding models to describe the ferromagnetic metal. We consider both a model for a conventional ferromagnetic metal, in which there are no explicit structural degrees of freedom, and a model for a half-metallic ferromagnetic colossal magnetoresistance (CMR) oxide which has explicit structural degrees of freedom. The Fermi energy of the magnetic metallic contact is adjusted to control the degree of electron transfer into the polymer. We investigate electron charge and spin transfer from the ferromagnetic metal to the organic polymer, and structural relaxation near the interface. Bipolarons are the lowest energy charge state in the bulk polymer for the nondegenerate SSH model Hamiltonian. As a result electrons (or holes) transferred into the bulk of the polymer form spinless bipolarons. However, there can be spin density in the polymer localized near the interface.Comment: 7 figure

Spin Injection and Detection in Magnetic Nanostructures

We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling regime. This enables us to discuss recent controversy on spin injection and detection experiments. Extending the result to a superconducting device, we find that the spin accumulation signal is strongly enhanced by opening of the superconducting gap since a gapped superconductor is a low carrier system for spin transport but not for charge. The enhancement is also expected in semiconductor devices.Comment: 4 pages, 3 figure